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| ACE1710B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE1710B
N-Channel Enhancement Mode MOSFET
Description
The ACE1710B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications
Features
ï· 100V/1.5A
ï· RDS(ON) ï¼280mΩ @ VGS = 10V
ï· High density cell design for ultra low RDS(ON)
ï· Fully characterized avalanche voltage and current
ï· Excellent package for good heat dissipation
ï· SOT23 -3LPackage
Absolute Maximum Ratings TA=25â unless otherwise noted
Parameter
Symbol Ratings Unit
Drain-Source Voltage
VDSS 100 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Continuous)
TA=25â
TA=70â
ID
1.5
A
1.2
Drain Current (Pulsed)
IDM
5A
Power Dissipation
TA=25â PD
1W
Operating temperature / storage temperature TJ/TSTG -55~150 â
Packaging Type
SOT-23-3 L
D
3
Marking
1
2
G
S
Ordering information
ACE1710B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.1 1
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