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| ACE1632B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1632B XX + H
Halogen - free
Pb - free
YM : TO-252
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Off characteristics
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250uA
60
V
Gate Leakage Current
Zero Gate Voltage Drain
Current
IGSS
VDS=0V,VGS=±20V
IDSS
VDS=60V, VGS=0V
On characteristics b
±100 nA
1 uA
Gate Threshold Voltage
VGS(th)
Drain-Source On-Resistance RDS(ON)
VDS=VGS, IDS=250uA
VGS=10V, ID=10A
VGS=4.5V, ID=5A
1.1 1.5 2.9 V
35 40
mΩ
42 50
Forward Transconductance
gfs*
VDS=15V,ID=10A
Switching characteristics b
20
S
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
VDS=48V, VGS=10V,
ID=18A
50
20
nC
15
45
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VGS=10V, VDS=30V, ID=10A,
RGEN=4.7Ω,
22
ns
42
Turn- Off Rise Time
tf
13
Dynamic characteristics
Input Capacitance
Ciss
1000
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
VDS=10V, VGS=0V
f=1MHz
200
pF
100
Drain-source diode characteristics and maximum ratings b
Drain-source diode forward
voltage
VSD
VGS=0V, IS=18A (2)
1.3 V
VER 1.2 2
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