ACE1632B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor

ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Description
ACE1613B uses advanced trench technology to provide excellent R_DS(ON). This device particularly suits
for low voltage application such as power management of desktop computer or notebook computer power
management, DC/DC converter.
This device has specifically been designed to minimize input capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and
Computer application. It is also intended for any application with low gate charge drive requirements.
Features
 VDS =60V, I_D=18A, V_GS 20V
 RDS(ON)<40mΩ @V_GS=10V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
60 V
Gate-Source Voltage
V_GSS ±20 V
Continuous
Maximum Drain Current
Pulsed
I_D
18
A
45
Continuous Power Dissipation (large heatsick) P_D 110 W
Operating Temperature / Storage Temperature T_J/T_STG -55/150 ^OC
Packaging Type
TO-252
D
G
S
VER 1.2 1