ACE1621B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1621B XX + H
Halogen - free
Pb - free
YM : TO-252
Electrical CharacteristicsTA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
Drain-Source On-Resistance R_DS(ON)
Forward Transconductance
gfs
Diode Forward Voltage
V_SD
Maximum Body-Diode
Continuous Current
I_S
Static
V_GS=0V, I_D=-250 uA
V_DS=V_GS, I_DS=-250uA
V_DS=0V,V_GS=±25V
V_DS=-24V, V_GS=0V
V_GS=-20V, I_D=-20A
V_GS=-10V, I_D=-20A
V_GS=-4.5V, I_D=-10A
V_DS=-5V,I_D=-20A
I_SD=-1A, V_GS=0V
Switching
-30
V
-1.5 -1.8 -3.5
±100 nA
-1 uA
7.5 9
8.5 12 mΩ
14 25
30
S
-0.72 -1.0 V
-55 A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Q_g
40 47.2 55
Q_gs
V_DS=-15V, V_GS=-10V, I_D=-20A
10
nC
Q_gd
20.4
td(on) _{VGS=-10V, RGEN=3Ω, VDS=-15V,}
12.4
nS
td(off)
R_L=0.75Ω
25.6
Dynamic
Input Capacitance
Ciss
3076 3500
Output Capacitance
REVERSE Transfer
Capacitance
Coss
Crss
V_GS=0V, V_DS=-15V, f=1MHz
603
pF
402 523
Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2 2