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| ACE1621B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE1621B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits
for low voltage application such as power management of desktop computer or notebook computer power
management, DC/DC converter.
Features
ï· VDS(V) =-30V
ï· ID=-60A
ï· RDS(ON)@VGS=-20V, IDS=-20A, Typ 7.5mΩ
ï· RDS(ON)@VGS=-10V, IDS=-20A, Typ 8.5mΩ
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
Continuous Drain Current * AC
TA=25â
TA=70â
VGSS
ID
±25 V
-60
A
-45
Pulsed Drain Current * B
IDM -130 A
Power Dissipation
TA=25â
TA=70â
100
PD
W
50
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
TO-252
VER 1.2 1
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