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| ACE1613B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE1613B
N-Channel Enhancement Mode MOSFET
Ordering information
ACE1613B XX + H
Halogen - free
Pb - free
YM : TO-252
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS=0V, ID=250uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±20V
VDS=24V, VGS=0V
25 27
V
1.5 1.8 2.4
±100 nA
1 uA
Drain-Source
On-Resistance
Forward Transconductance
RDS(ON)
gfs
VGS=10V, ID=40A
VGS=4.5V, ID=20A
VDS=5V,ID=5A
4.8 6.0
mΩ
6.0 9.0
7.3
S
Diode Forward Voltage
Turn-On Delay Time
Turn-Off Delay Time
VSD
td(on)
td(off)
IS=10A, VGS=0V
VGS=10V, IDS=1A, VDS=15V,
RGEN=6Ω, RL=15Ω
0.86 1 V
18
nS
61
Input Capacitance
Ciss
2650
Output Capacitance
Reverse Transfer
Capacitance
Coss
Crss
VGS=0V, VDS=15V, f=1MHz
910
pF
774
Note:
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°C, the current rating is based on the DC
ï¼<10sï¼test conditions.
2. Repetitive rating, pulse width limited by junction temperature. 300us Pulse Drain Current Tested.
3. Current limited by bond wire.
VER 1.2 2
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