ACE1613B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE1613B
N-Channel Enhancement Mode MOSFET
Description
ACE1613B uses advanced trench technology to provide excellent R_DS(ON). This device particularly suits
for low voltage application such as power management of desktop computer or notebook computer power
management, DC/DC converter.
Features
 VDS =25V, I_D=60A, V_GS 20V
 RDS(ON)@V_GS=10V, I_DS=40A, Typ 4.8mΩ
 RDS(ON)@V_GS=4.5V, I_DS=20A, Typ 6.0mΩ
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
25 V
Gate-Source Voltage
V_GSS ±20 V
Pulsed Drain Current ^{(Note 2)}
I_DM
150 A
Mounted on PCB of Minimum Footprint Continuous Drain Current ^{(Note 1)} I_D
17 A
Total Power Dissipation ^{(Note 1)} P_D
1.5 W
Pulsed Drain Current ^{(Note 2)}
I_DM
150 A
Mounted on PCB of 1in² Pad Area Continuous Drain Current ^{(Note 1)} I_D
22 A
Total Power Dissipation ^{(Note 1)} P_D
2.5 W
Pulsed Drain Current ^{(Note 2)}
I_DM
150 A
Mounted on Large Heat Sink
Continuous Drain Current ^{(Note 1)} I_D 60 ^{(Note 3)} A
Total Power Dissipation ^{(Note 1)} P_D
50 W
Operating Junction Temperature / Storage Temperature Range
T_J/T_STG -55/150 ^OC
Packaging Type
TO-252
VER 1.2 1