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ACE1534B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Power MOSFET
Ordering information
ACE1534B XX + H
Halogen - free
Pb - free
PN: DFN5*6-EP
ACE1534B
N-Channel Power MOSFET
Electrical Characteristics TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Static
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
VGS=0V, ID=250µA
VDS=27V, VGS=0V
Gate threshold voltage
Gate leakage current
VGS(th)
IGSS
Drain-source on-state resistance RDS(ON)
Forward Trans conductance
gFS
VGS=VDS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, ID=30A
VGS=4.5V, ID=15A
VDS =10V, ID= 15A
Diode forward voltage
Maximum body-diode
continuous current
VSD
ISD=1A, VGS=0V
IS
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VGS=10V, VDS=15V,
ID=10A
Qgd
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
td (on )
tr
td(off)
tf
VDD=15V, ID=1A,
VGS=10V,RG=3.3Ω
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1.0MHz
Min Typ Max Unit
30
V
1 µA
1.0 1.6 2.5 V
±100 µA
1.2 1.6
mΩ
1.8 2.4
30
S
0.65
1
V
130 A
65.2 120
16
30 nC
21
40
28
56
45
90
ns
105 200
40
80
7720
945
pF
435
VER 1.1 2