ACE1534B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Power MOSFET

ACE1534B
N-Channel Power MOSFET
Description
ACE1534B uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
 V_DS= 30V , I_D=130A
 R_DS(ON)@ V_GS = 10V , TYP= 1.2mΩ
 R_DS(ON)@ V_GS = 4.5V , TYP= 1.8mΩ
Absolute Maximum Ratings^{@TA=25℃ unless otherwise noted}
Parameter
Symbol
Max
Unit
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current (Continuous)*AC
T_A=25℃
T_A=100℃
I_D
130
A
82
Drain Current (Pulsed)*B
Power Dissipation
I_DM
T_A=25℃
P_D
520
A
166
W
Operating temperature / Storage temperature
T_J/T_STG
-55~150
℃
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still
air environment with T_A=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP
VER 1.1 1