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| ACE1532B Datasheet, PDF (2/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1532B
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
(TA=25â, unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-Resistance RDS(ON)
Forward Transconductance gfs*
Turn-On Time
Turn-Off Time
td(on)*
td(off)*
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
* Pw ⦠300 μs, Duty cycle ⦠1%
Ciss
Coss
Crss
Conditions
Static
VGS=0V, ID=10uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±20V
VDS=60V, VGS=0V
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V,ID=0.5A
Switching
VGS=10V, ID=0.19A, VDS=30V,
RL=155Ω
Dynamic
VGS=0V, VDS=25V, f=1MHz
Min. Typ. Max. Unit
60
V
1.0 1.85 2.5
10 uA
1 uA
7.5
Ω
7.5
15
S
12
nS
20
52
7.7
pF
3.9
VER 1.2 2
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