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ACE1532B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor
ACE1532B
N-Channel Enhancement Mode Field Effect Transistor
Features
 Low On-Resistance
 Fast Switching Speed
 Low-voltage drive
 Easily designed drive circuits
 We declare that the material of product is ROHS compliant.
 ESD Protected:2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Continuous) (TA=25℃)
ID
250 mA
Drain Current (Pulse)
IDM*1 1.6 A
Power Dissipation (TA=25℃)
PD*2 225 mW
Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Packaging Type
SOT-23-3
D
G
S
Ordering information
ACE1532B XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.2 1