 English |
|
|
|
|
|
|
|
| ACE1512E Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor with ESD Protection | |||
| |||
| ◁ |
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE1512EBMS + H
Halogen - free
Pb - free
BMS : TSOT-23-3
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Forward transconductance
Diode forward voltage
Maximum body-diode continuous current
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Note :
Symbol
Test Conditions
Min Typ Max Unit
Static
V(BR)DSS
VGS=0V, ID=250µA
IDSS
VDS=20V, VGS=0V
VGS(th)
VGS=VDS, IDS=250µA
IGSS
VGS=±8V, VDS=0V
VGS=4.5V, ID=6.5A
RDS(ON)
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
gFS
VDS=5V, ID=6.5A
VSD
ISD=2.5A, VGS=0V
IS
Switching
20
V
1 µA
0.4 0.52 1
V
10 µA
16.2 21
19.4 25 mΩ
24.4 33
13
S
0.67 1.6 V
2.5 A
Qg
Qgs VGS=4.5V, VDS=10V, ID=8A
Qgd
td(on)
tr
td(off)
VGS=5V, VDS=10V
RL=1.5Ω, RGEN=3Ω
tf
Dynamic
13.8 17.94
4.1 5.33 nC
5.6 7.28
6.2 12.4
12.7 25.4
ns
51.7 103.4
16 32
Ciss
1160
Coss VGS=0V, VDS=10V, f=1MHz
104
pF
Crss
29
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
VER 1.1 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese