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| ACE1512E Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor with ESD Protection | |||
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ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V to 8V.
It is ESD protected.
Features
⢠VDS (V)=20V
⢠ID=6.5A (VGS=4.5V)
⢠RDS(ON)<21mΩ (VGS=4.5V)
⢠RDS(ON)<25mΩ (VGS=2.5V)
⢠RDS(ON)<33mΩ (VGS=1.8V)
⢠ESD Protected : 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC TA=25â
TA=70â
Drain Current (Pulsed)*B
Power Dissipation
TA=25â
TA=70â
Operating temperature / storage temperature
Symbol Ratings Unit
VDSS
20
V
VGSS
±8
V
6.5
ID
A
5.2
IDM
24 A
1
PD
W
0.64
TJ/TSTG -55~150 â
Packaging Type
TSOT-23-3
VER 1.1 1
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