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| ACE1511A Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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Packaging Type
SOT-723
D
3
ACE1511A
P-Channel Enhancement Mode MOSFET
D1
1
2
G
S
PIN DESCRIPTION
Pin
1
2
3
Ordering information
ACE1511A XX + H
Halogen - free
Pb - free
JM : SOT-723
G1
S1
Symbol
G
S
D
Electrical Characteristics
TA=25â, unless otherwise noted.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source
On-Resistance
RDS(ON)
Conditions
Static
VGS=0V, ID=-250 uA
VDS=VGS, ID=-250uA
VDS=0V,VGS=±12V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55â
VDS⤠-4.5V,VGS =-5V
VGS=-4.5V, ID=-0.45A
VGS=-2.5V, ID=-0.35A
VGS=-1.8V, ID=-0.25A
Description
Gate
Source
Drain
Min. Typ. Max. Unit
-20
-0.35
V
-0.8
±30 uA
-1
uA
-5
-0.7
A
0.42 0.52
0.58 0.70 Ω
0.75 0.95
VER 1.1 2
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