ACE1511A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE1511A
P-Channel Enhancement Mode MOSFET
Description
The ACE1511A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high density process is especially tailored to minimize
on-state resistance and provide superior switching performance. These devices are particularly suited
for low voltage applications such as notebook computer power management and other battery powered
circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
Features
• P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
• Super high density cell design for extremely low R_DS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-723 package design
Applications
• Drivers : Relays/Solenoids/Lamps/Hammers
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
Absolute Maximum Ratings
(T_A=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J=150℃)
T_A=25℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
T_A=25℃
Operating Junction Temperature / Storage Temperature Range
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
P_D
T_J/T_STG
Typical
-20
±12
-0.45
-1.0
-0.3
0.15
-55/150
Unit
V
V
A
A
A
W
O_C
VER 1.1 1