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| ACE1358B Datasheet, PDF (2/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1358B
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Forward trans conductance
Diode forward voltage
V(BR)DSS
IDSS
VGS(th)
IGSS
RDS(ON)
gFS
VSD
VGS=0V, ID=250µA
VDS=20V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±12V, VDS=0V
VGS=4.5V, ID=2A
VGS=2.5V, ID=1A
VDS=5V, ID=2A
ISD=1A, VGS=0V
Switching
20
V
1 µA
0.5 0.75 1.1 V
±100 nA
36 50
mΩ
46 80
6
S
0.75 1.0 V
Total gate charge
Qg
2.4
Gate-source charge
Qgs
VGS=4.5V, VDS=10V, ID=2A
0.3
nC
Gate-drain charge
Qgd
0.8
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
Tr
td(off)
Tf
VDD=10V, RL=3Ω,ID =1A,
VGEN = 4.5V RG = 6Ω
2.1
3.6
ns
23.3
4.5
Dynamic
Input capacitance
Ciss
240
Output capacitance
Coss VGS=0V, VDS=10V, f=1.0MHz
40
pF
Reverse transfer capacitance Crss
22
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test: PWâ¤300μ s, duty cycleâ¤2%.
3. For design AID only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
VER 1.1 2
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