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| ACE1358B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1358B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1358B uses advanced trench technology to provide excellent RDS, low gate charge and
operation with gate voltages as low as 2.5V.
-RoHS Compliant
-Halogen Free
Features
ï¬ VDS (V) = 20V,ID = 2A
ï¬ RDS(ON)<50mΩ @ VGS= 4.5V
ï¬ RDS(ON)<80mΩ @ VGS= 2.5V
ï¬ TSOT-23-3 Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
TA=25â
TA=70â
Drain Current (Pulsed)
Power Dissipation
TA=25â
Operating temperature / storage temperature
Symbol
VDSS
VGSS
ID
IDM
PD
TJ/TSTG
Max
Unit
20
V
±12
V
2
A
1.5
8
A
0.8
W
-55~150 â
Packaging Type
TSOT-23-3
Ordering information
ACE1358B XXX + H
Halogen - free
Pb - free
BMS: TSOT-23-3
VER 1.1 1
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