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| ACE1060B Datasheet, PDF (2/6 Pages) ACE Technology Co., LTD. – N-Channel Super Trench Power MOSFET | |||
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ACE1060B
N-Channel Super Trench Power MOSFET
Electrical Characteristics
TA=25â, unless otherwise specified.
Parameter
Symbol
Drain-Source Breakdown
Voltage
V(BR)DSS
Zero Gate Voltage Drain Current IDSS1
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Forward Trans Conductance
Diode Forward Voltage
VGS(TH)
IGSS
RDS(on)
gFS
VSD
Diode Forward Current
IS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
td( on )
tr
td( off )
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
Test Conditions
Static
VGS = 0V, ID = 250μA
VDS = 100V, VGS = 0V
VGS = VDS , IDS= 250μA
VGS= ±20V , VDS=0V
VGS = 10V , ID= 30A
VDS= 10V , ID= 30A
ISD= 60A , VGS= 0V
Switching
VDS= 50V, ID= 30A,
VGS= 10V
VDD= 50V,ID= 30A,
VGS= 10V,RGEN= 4.7Ω
Dynamic
VDS=50V,VGS= 0V,
f= 1.0MHz
Min Typ Max Unit
100
V
1
μA
2.5
4.5 V
±100 nA
7.2 8.5 mâ¦
40
S
1.2 V
60
A
48
nC
15
nC
8
nC
12
ns
43
ns
31
ns
10
ns
3400
pF
580
pF
30
pF
VER 1.2 2
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