ACE1060B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Super Trench Power MOSFET

ACE1060B
N-Channel Super Trench Power MOSFET
Description
ACE1060B uses Super Trench technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an
extremely low combination of R_DS(ON) and Qg. This device is ideal for high-frequency switching and
synchronous rectification.
Features
 V_DS=100V, I_D=60A
 R_DS(ON)1@V_GS=10V, TYP 7.2mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
V_DSS
100
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current (Continuous)*AC
T_A=25℃
T_A=100℃
I_D
60
A
52
Drain Current (Pulsed)*B
I_DM
240
A
Power Dissipation
T_A=25℃
P_D
105
W
Operating temperature / storage temperature
T_J/T_STG
-55~150 ℃
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP
Ordering information
ACE1060B XX + H
Halogen - free
Pb - free
PN: DFN5*6-EP
VER 1.2 1