5SHX06F6010 Datasheet, PDF (5/13 Pages) The ABB Group – Reverse Conducting Integrated Gate-Commutated Thyristor

Thermal
Maximum rated values ^{Note 1}
Parameter
Junction operating temperature
Storage temperature range
Ambient operational temperature
Characteristic values
Symbol
T_vj
T_stg
T_a
Parameter
Symbol
Thermal resistance junction-to-case R_th(jc)
of GCT
Thermal resistance case-to-
heatsink of GCT
R_th(ch)
Thermal resistance junction-to-case R_th(jc)
of Diode
Thermal resistance case-to-
heatsink of Diode
R_th(ch)
Conditions
Conditions
Double side cooled
Diode not dissipating
Double side cooled
GCT not dissipating
5SHX 06F6010
min typ max Unit
0
115
°C
-40
60
°C
0
60
°C
min typ max Unit
40 K/kW
16 K/kW
53 K/kW
17 K/kW
Analytical function for transient thermal
impedance:
n
∑ ^{Z thJC (t) = R i(1 - e -t/τ i )}
GCT
i =1
i
1
2
3
4
R_i(K/kW) 25.096
9.235
3.727
1.942
τ_i(s)
0.5619 0.0721 0.0071 0.0020
Diode
i
R_i(K/kW)
τ_i(s)
1
33.360
0.5623
2
12.255
0.0723
3
4.854
0.0072
4
2.537
0.0020
Max. Turn-off current for Lifetime operation
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time (max. values)
• calculated lifetime of on-board capacitors
20 years
• with slightly forced air cooling (air velocity
> 0.5 m/s)
• strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 5 of 13