5SHX06F6010 Datasheet, PDF (3/13 Pages) The ABB Group – Reverse Conducting Integrated Gate-Commutated Thyristor

Diode Data
On-state (see Fig. 9 to 12, 24, 25)
Maximum rated values ^{Note 1}
Parameter
Symbol Conditions
min
Max. average on-state
current
I_F(AV)M Half sine wave, T_C = 85 °C
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
I_F(RMS)
I_FSM
I²t
t_p = 10 ms, T_vj = 115°C, V_R = 0 V
Max. peak non-repetitive I_FSM
surge current
t_p = 1 ms, T_vj = 115°C, V_R = 0 V
Limiting load integral
I²t
Characteristic values
Parameter
Symbol Conditions
min
On-state voltage
V_F
I_F = 520 A, T_vj = 115°C
Threshold voltage
Slope resistance
V_(F0)
r_F
T_vj = 115°C
I_F = 100...1000 A
Turn-on (see Fig. 24, 25)
Characteristic values
Parameter
Symbol Conditions
min
Peak forward recovery
voltage
V_FRM
dI_F/dt = 300 A/µs, T_vj = 115°C
dI_F/dt = 1400 A/µs, T_vj = 115°C
Turn-off (see Fig. 13 to 17, 24, 25)
Maximum rated values ^{Note 1}
Parameter
Symbol Conditions
min
Max. decay rate of on-state di/dt_crit I_FM = 520 A, T_vj = 115 °C
current
V_DClink = 3900 V
Characteristic values
Parameter
Symbol Conditions
min
Reverse recovery current I_RM
Reverse recovery charge Q_rr
Turn-off energy
E_rr
I_FM = 520 A, V_DC-Link = 3300 V
-dI_F/dt = 190 A/µs, L_CL = 1 µH
C_CL = 0.5 µF, R_S = 3.5 Ω,
T_vj = 115°C, D_CL = 5SDF 02D6004
5SHX 06F6010
typ
max Unit
110 A
180 A
2.5×10³ A
31.25×10³ A²s
8×10³ A
32×10³ A²s
typ
max Unit
6.3
V
3.3
V
5.8
mΩ
typ
max Unit
80
V
250
V
typ
max Unit
190 A/µs
typ
max Unit
320
A
TBD µC
1.3
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 3 of 13