5STP33L2800 Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – Patented free-floating silicon technology

On-state
Maximum rated values ¹⁾
Parameter
Max. average on-state
current
RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Symbol Conditions
I_TAVM Half sine wave, T_c = 70°C
I_TRMS
I_TSM
I²t
I_TSM
I²t
tp = 10 ms, Tj = 125°C,
V_D=V_R = 0 V
tp = 8.3 ms, Tj = 125°C,
V_D=V_R=0 V
Symbol Conditions
V_T
I_T = 3000 A, T_j= 125°C
V_T0
I_T = 2000 A - 6000 A, T_j= 125°C
r_T
Tj = 125°C
I_H
T_j = 25°C
T_j = 125°C
I_L
T_j = 25°C
T_j = 125°C
5STP 33L2800
min typ
min typ
max Unit
3740
A
5880
A
60000 A
18000
65000
kA²s
A
17500 kA²s
max
1.23
0.95
0.1
100
60
500
300
Unit
V
V
mΩ
mA
mA
mA
mA
Switching
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min typ
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
di/dt_crit
di/dt_crit
T_j = 125°C, I_TRM = 4500 A,
V_D ≤ 0.67⋅V_DRM,
I_FG = 2 A, t_r = 0.5 µs
Cont.
f = 50 Hz
Cont.
f = 1Hz
Circuit-commutated turn-off t_q
time
T_j = 125°C, I_TRM = 4500 A,
V_R = 200 V, di_T/dt = -5 A/µs,
V_D ≤ 0.67⋅V_DRM, dv_D/dt = 20 V/µs,
Characteristic values
Parameter
Symbol Conditions
400
min typ
Recovery charge
Q_rr
T_j = 125°C, I_TRM = 4500 A,
V_R = 200 V, di_T/dt = -5 A/µs
2000
Delay time
t_d
V_D = 0.4⋅V_DRM, I_FG = 2 A, t_r = 0.5 µs
max Unit
250 A/µs
1000 A/µs
µs
max Unit
4000 µAs
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Jan. 02
page 2 of 6