5STP33L2800 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Patented free-floating silicon technology

V_DSM = 2800 V
I_TAVM = 3740 A
I_TRMS = 5880 A
I_TSM = 60000 A
V_T0
=
0.95 V
r_T
=
0.1 mΩ
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values ¹⁾
Symbol Conditions
V_DRM, V_RRM f = 50 Hz, t_p = 10ms
V_RSM1
t_p = 5ms, single pulse
dV/dt_crit
Exp. to 0.67 x V_DRM, T_j = 125°C
Characteristic values
Parameter
Symbol
Forwarde leakage current
I_DRM
Reverse leakage current
I_RRM
5STP 33L2800
2800 V
3000 V
5STP 33L2600
2600 V
2800 V
1000 V/µs
Conditions
V_DRM, Tj = 125°C
V_RRM, Tj = 125°C
min typ
5STP 33L2200
2200 V
2400 V
max
400
400
Unit
mA
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
F_M
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
D_S
D_a
Conditions
min
63
typ
70
max
84
50
100
Unit
kN
m/s²
m/s²
min
36
15
typ
max
1.45
Unit
kg
mm
mm
1) _{Maximum Ratings are those values beyond which damage to the device may occur}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.