5SGF30J4502 Datasheet, PDF (2/9 Pages) The ABB Group – Gate turn-off Thyristor

GTO Data
On-state
I_TAVM Max. average on-state current
I_TRMS Max. RMS on-state current
I_TSM Max. peak non-repetitive
surge current
I²t
Limiting load integral
V_T
On-state voltage
V_T0
Threshold voltage
r_T
Slope resistance
I_H
Holding current
5SGF 30J4502
960 A
1510 A
24 kA
40 kA
2.88⋅10⁶ A²s
0.80⋅10⁶ A²s
3.90 V
1.80 V
0.70 mΩ
100 A
Half sine wave, T_C = 85 °C
t_P =
t_P =
t_P =
10 ms T_j = 125°C
1 ms After surge:
10 ms V_D = V_R = 0V
t_P =
1 ms
I_T =
3000 A
I_T = 400 - 4000 A T_j = 125 °C
T_j = 25 °C
Gate
V_GT
I_GT
V_GRM
I_GRM
Gate trigger voltage
Gate trigger current
Repetitive peak reverse voltage
Repetitive peak reverse current
1.2 V
2.5 A
17 V
20 mA
V_D = 24 V
R_A = 0.1 Ω
V_GR = V_GRM
T_j = 25 °C
Turn-on switching
di/dt_crit Max. rate of rise of on-state
current
t_d
t_r
t_on(min)
Delay time
Rise time
Min. on-time
E_on
Turn-on energy per pulse
500 A/µs
1000 A/µs
2.5 µs
5.0 µs
100 µs
2.50 Ws
f = 200Hz I_T = 3000 A, T_j = 125 °C
f = 1Hz I_GM = 25 A, di_G/dt = 20 A/µs
V_D = 0.5 V_DRM T_j = 125 °C
I_T = 3000 A di/dt = 300 A/µs
I_GM =
25 A di_G/dt = 20 A/µs
C_S =
3 µF R_S = 5 Ω
Turn-off switching
I_TGQM Max controllable turn-off
current
t_s
t_f
t_off(min)
E_off
I_GQM
Storage time
Fall time
Min. off-time
Turn-off energy per pulse
Peak turn-off gate current
3000 A
25.0 µs
3.0 µs
100 µs
10.0 Ws
800 A
V_DM = V_DRM
di_GQ/dt =
C_S = 3 µF
L_S
≤
V_D = ½ V_DRM V_DM
=
T_j = 125 °C di_GQ/dt =
I_TGQ = I_TGQM
C_S = 3 µF R_S
=
L_S ≤ 0.2 µH
40 A/µs
0.2 µH
V_DRM
40 A/µs
5Ω
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000
page 2 of 9