5SGF30J4502 Datasheet, PDF (1/9 Pages) The ABB Group – Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0 =
r_T =
V_DClin =
4500 V
3000 A
24 kA
1.80 V
0.70 _mΩ
3000 V
Gate turn-off Thyristor
5SGF 30J4502
PRELIMINARY
Doc. No. 5SYA 1211-04 Aug. 2000
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and
static losses designed to retro-fit all former 3 kA GTOs of the same voltage. It offers
optimal trade-off between on-state and switching losses and is encapsulated in an
industry-standard press pack housing 108 mm wide and 26 mm thick.
Blocking
V_DRM Repetitive peak off-state voltage
V_RRM Repetitive peak reverse voltage
I_DRM Repetitive peak off-state current ≤
I_RRM Repetitive peak reverse current ≤
V_DClink Permanent DC voltage for 100
FIT failure rate
4500 V
17 V
V_GR ≥ 2V
100 mA V_D = V_DRM
V_GR ≥ 2V
50 mA V_R = V_RRM
R_GK = ∞
3000 V -40 ≤ T_j ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
F_m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
min.
max.
28 kN
38 kN
50 m/s²
200 m/s²
M
Weight
D_S
Surface creepage distance
D_a
Air strike distance
1.3 kg
≥ 33 mm
≥ 15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.