 English |
|
|
|
|
|
|
|
| 5SDF10H4520 Datasheet, PDF (2/7 Pages) The ABB Group – Fast Recovery Diode | |||
| |||
| ◁ |
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
Max. average on-state
current
IF(AV)M Half sine wave, TC = 70 °C
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
IF(RMS)
IFSM
I2t
tp = 10 ms, Tvj = 140°C, VR = 0 V
Max. peak non-repetitive IFSM
surge current
tp = 30 ms, Tvj = 140°C, VR = 0 V
Limiting load integral
I2t
Characteristic values
Parameter
Symbol Conditions
min
On-state voltage
VF
IF = 2500 A, Tvj = 140°C
Threshold voltage
Slope resistance
V(T0)
rT
Tvj = 140°C
IF = 500...2500 A
Turn-on
Characteristic values
Parameter
Symbol Conditions
min
Peak forward recovery
voltage
VFRM
dIF/dt = 600 A/µs, Tvj = 140°C
dIF/dt = 3000 A/µs, Tvj = 140°C
Turn-off
Maximum rated values 1)
Parameter
Symbol Conditions
min
Max. decay rate of on-state di/dtcrit IFM = 4000 A, Tvj = 140 °C
current
VDClink = 2800 V
Characteristic values
Parameter
Symbol Conditions
min
Reverse recovery current IRM
IFM = 3300 A, VDC-Link = 2800 V
Reverse recovery charge Qrr
-dIF/dt = 600 A/µs, LCL = 300 nH
Turn-off energy
Err
CCL = 10 µF, RCL = 0.65 â¦,
Tvj = 140°C, DCL = 5SDF 10H4520
5SDF 10H4520
typ
max Unit
1440 A
2260 A
25Ã103 A
3.12Ã106 A2s
16Ã103 A
3.84Ã106 A2s
typ
max Unit
3.1
3.8
V
1.75
V
0.88 mâ¦
typ
max Unit
80
V
250
V
typ
max Unit
600 A/µs
typ
max Unit
1600
A
5600 µC
9.5
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1170-00 March 05
page 2 of 7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese