5SDF10H4520 Datasheet, PDF (1/7 Pages) The ABB Group – Fast Recovery Diode

V_RRM =
I_F(AV)M =
I_FSM =
V_(T0) =
r_T
=
V_DClink =
4500 V
1440 A
25×10³ A
1.75 V
0.88 mΩ
2800 V
Fast Recovery Diode
5SDF 10H4520
• Low temperature bonding technology
• Industry standard housing
• Cosmic radiation withstand rating
• Low on-state and switching losses
• Optimized for snubberless operation
Doc. No. 5SYA1170-00 March 05
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Parameter
V_RRM
V_DClink
V_DClink
f = 50 Hz, t_p = 10ms, T_vj = 140°C
Ambient cosmic radiation at sea level in open
air. (100% Duty)
Ambient cosmic radiation at sea level in open
air. (5% Duty)
Symbol Conditions
min typ
Repetitive peak reverse current
I_RRM
V_R = V_RRM, T_vj = 140°C
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
F_m
a
Device unclamped
36
40
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Housing thickness
H
25.8
Surface creepage distance
D_S
33
Air strike distance
D_a
20
1) Maximum rated values indicate limits beyond which damage to the device may occur
Value
4500
2800
3200
max
100
max
46
50
200
max
0.83
26.1
Unit
V
V
V
Unit
mA
Unit
kN
m/s²
m/s²
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.