AAT8107 Datasheet, PDF (4/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

Typical Characteristics
T_J = 25ºC, unless otherwise noted.
Gate Charge
5 _{VD = 15V}
I_D = 6.5A
4
3
2
1
0
0
3
6
9
12
15
Q_G, Charge (nC)
Capacitance
2000
1600
1200
C_iss
800
400
0
0
C_rss
C_oss
5
10
15
20
V_DS (V)
AAT8107
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0
0.2
0.4
0.6
0.8
V_SD (V)
1
1.2
Single Pulse Power, Junction to Ambient
50
40
30
20
10
0
0.001
0.01
0.1
1
Time (s)
10
100
Transient Thermal Response, Junction to Ambient
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E-04
Single Pulse
1E-03
1E-02
1E-01
1E+00
Time (s)
1E+01
1E+02
1E+03
4
8107.2005.05.1.1