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| AAT8107 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET | |||
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General Description
The AAT8107 low threshold 20V, P-channel MOS-
FET is a member of AnalogicTech's TrenchDMOS
product family. Using an ultra-high density propri-
etary TrenchDMOS technology, the AAT8107 is
designed for use as a load switch in battery-pow-
ered applications and protection in battery packs.
AAT8107
20V P-Channel Power MOSFET
Features
TrenchDMOSâ¢
⢠VDS(MAX) = -20V
⢠ID(MAX)1 = -6.5A @ 25°C
⢠Low RDS(ON):
⢠35m⦠@ VGS = -4.5V
⢠60m⦠@ VGS = -2.5V
Applications
⢠Battery Packs
⢠Battery-Powered Portable Equipment
SOP-8L Package
Top View
DDDD
8765
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
1234
SSSG
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C1
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
Maximum Power Dissipation1
Operating Junction and Storage Temperature Range
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Value
-20
±12
±6.5
±5.2
±32
-1.7
2.5
1.6
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Typical Junction-to-Ambient Steady State1
Maximum Junction-to-Ambient t<10 Seconds1
Typical Junction-to-Foot1
Value
80
50
27
Units
°C/W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8107.2005.05.1.1
1
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