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AAT8515 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET
AAT8515
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
Conditions
DC Characteristics
BVDSS Drain-Source Breakdown
Voltage
VGS = 0V, ID = -250µA
RDS(ON)
Drain-Source On-Resistance1
VGS = -4.5V, ID = -5.4A
VGS = -2.5V, ID = -4.1A
ID(ON) On-State Drain Current1
VGS = -4.5V, VDS = -5V (pulsed)
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = -250µA
IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V
IDSS
Drain Source Leakage Current VGS = 0V, VDS = -20V
VGS = 0V, VDS = -16V, TJ = 70°C2
gfs
Forward Transconductance1 VDS = -5V, ID = -5.4A
Dynamic Characteristics2
QG Total Gate Charge
QGS Gate-Source Charge
QGD Gate-Drain Charge
tD(ON) Turn-On Delay
tR
Turn-On Rise Time
tD(OFF) Turn-Off Delay
tF
Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VSD Source-Drain Forward
Voltage1
VGS = 0, IS = -5.4A
IS
Continuous Diode Current3
Min
-20
-32
-0.6
Typ Max
27 35
46 60
±100
-1
-5
12
13.6
2.3
5.5
10
37
36
52
-1.4
-1.5
Units
V
mΩ
A
V
nA
µA
S
nC
ns
V
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8515.2005.04.1.0