AAT8515 Datasheet, PDF (1/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

General Description
The AAT8515 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
AAT8515
20V P-Channel Power MOSFET
Features
• Drain-Source Voltage (max): -20V
• Continuous Drain Current¹ (max):
-5.4A @ 25°C
• Low On-Resistance:
— 35mΩ @ V_GS = -4.5V
— 60mΩ @ V_GS = -2.5V
SC70JW-8 Package
Top View
DDDD
8765
Absolute Maximum Ratings
T_A = 25°C, unless otherwise noted.
Symbol
V_DS
V_GS
I_D
I_DM
I_S
T_J
T_STG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T_J = 150°C¹
Pulsed Drain Current²
Continuous Source Current (Source-Drain Diode)¹
Operating Junction Temperature Range
Storage Temperature Range
1234
SSSG
T_A = 25°C
T_A = 70°C
Value
-20
±12
±5.4
±4.3
±32
-1.5
-55 to 150
-55 to 150
Thermal Characteristics¹
Symbol
R_θJA
R_θJA2
R_θJF
P_D
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
T_A = 25°C
T_A = 70°C
Typ
Max
100
120
61
73.5
33
40
1.7
1.0
Units
V
A
°C
°C
Units
°C/W
°C/W
°C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R_θJF + R_θFA = R_θJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R_θJF is guaranteed by design; however,
R_θCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8515.2005.04.1.0
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