AP5521GM-HF_16 Datasheet, PDF (7/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

P-Channel
10
I _D = -2A
V _DS = -50V
8
6
4
2
0
0.0
8.0
16.0
24.0
32.0
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
Operation in this
area limited by
RDS(ON)
1
100us
1ms
10ms
0.1
T _A =25 ^o C
Single Pulse
0.01
0.01
0.1
1
100ms
1s
DC
10
100
1000
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
AP5521GM-HF
f=1.0MHz
2000
1600
C _iss
1200
800
400
C _oss
0
C _rss
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
30
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7