AP5521GM-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP5521GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP5521 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
100V
150mΩ
2.5A
-100V
160mΩ
-2.5A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
S1
S2
applications.
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
100
-100
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
+20
+20
V
2.5
-2.5
A
2.0
-2.0
A
10
-10
A
P_D@T_A=25℃
Total Power Dissipation
2
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501092