AP4525GEH_08 Datasheet, PDF (7/8 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-Channel
12
8
I _D = -5 A
V _DS = - 2 0 V
4
AP4525GEH
f=1.0MHz
10000
1000
C _iss
C _oss
100
C _rss
0
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
T _c =25 ^o C
Single Pulse
10ms
100ms
1s
DC
0.1
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V _DS =-5V
40
T _j =25 ^o C
T _j =150 ^o C
30
20
10
0
0
2
4
6
8
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
Q_G
-4.5V
Q_GS
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
7