AP4525GEH_08 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP4525GEH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
S1
G1
S2
G2
D1/D2
N-CH
P-CH
TO-252-4L
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
40V
28mΩ
15A
-40V
42mΩ
-12A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
D2
G1
G2
S1
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
40
-40
±16
±16
15.0
-12.0
12.0
-10.0
50
-50
10.4
0.083
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
12
110
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200809235