AP2030SD Datasheet, PDF (6/11 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-Channel
6
5
I _D =2.6A
V _DS =10V
4
3
2
1
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
AP2030SD
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
5
9
13
17
21
25
29
V _DS (V)
Fig 10. Typical Capacitance Characteristics
100
1.5
10
1
T _j =150 ^oC
T _j =25 ^o C
1
0.5
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j ,Junction Temperature ( ^oC)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature