AP2030SD Datasheet, PDF (4/11 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2030SD
N-Channel
25
4.5V
4.0V
20
3.5V
15
3,0V
10
5
V _GS =2.5V
T _C =25 ^o C
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
25
4.5V
3.5V
20
3.0V
15
10
2.5V
5
V _GS =2. 0 V
T _C =150 ^oC
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
70
I _D =2.6A
65
T _C =25 ℃
60
55
50
45
40
2
3
4
5
V _GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I _D =2.6A
1.6 ^{V GS =4.5V}
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^oC)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature