AP7811GM Datasheet, PDF (5/6 Pages) Advanced Power Electronics Corp. – Low On-Resistance, Fast Switching

AP7811GM
12
I _D =11.8A
10
8
6
V _DS =10V
V _DS =15V
V _DS =20V
4
2
0
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
1
5
9
13
17
21
25
29
V _DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T _j =150 ^o C
1.00
T _j =25 ^o C
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
Junction Temperature ( ^o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature