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| AP7811GM Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – Low On-Resistance, Fast Switching | |||
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AP7811GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=11.8A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VDS=15V, ID=11.8A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ±12V
ID=11.8A
VDS=20V
VGS=5V
VDS=15V
ID=1.5A
RG=3.3Ω,VGS=5V
RD=10Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=20V
f=1.0MHz
25 -
-
V
- 0.1 - V/â
- 10 12 mΩ
0.5 - 1.2 V
- 30 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 32 - nC
- 2.6 - nC
- 15.5 - nC
- 12 - ns
- 28 - ns
- 41 - ns
- 40 - ns
- 800 - pF
- 460 - pF
- 215 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25â, IS=2.3A, VGS=0V
Min. Typ. Max. Units
-
- 2.08 A
-
- 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 â/W when mounted on Min. copper pad.
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