AP6982M Datasheet, PDF (5/7 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE

Channel-1
14
I_D=8A
12
V _DS =16V
10
V _DS =20V
V _DS =24V
8
6
4
2
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T _A =25 ^o C
1s
Single Pulse
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
AP6982M
f=1.0MHz
10000
C _iss
1000
C _oss
C _rss
100
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.001
0.0001
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135^oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off)tf
V_G
Q_G
4.5V
Q_GS
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform