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| AP6982M Datasheet, PDF (2/7 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE | |||
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AP6982M
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=8A
VGS=4.5V, ID=6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=8A
Drain-Source Leakage Current (Tj=25oC)
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=24V, VGS=0V
VGS=±25V
ID=8A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-
V
- 0.02 - V/â
-
- 18 mΩ
-
- 30 mΩ
1
-
3
V
- 13 -
S
-
-
1 uA
-
-
25 uA
-
- ±100 nA
- 17 27 nC
-
5
- nC
- 10 - nC
- 11 - ns
-
6
- ns
- 33 - ns
- 25 - ns
- 1400 2240 pF
- 320 - pF
- 220 - pF
- 1.57 -
â¦
Source-Drain Diode
Symbol
Parameter
VSD
Forward On Voltage2
trr
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=8A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 27 - ns
- 22 - nC
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