AP4953M Datasheet, PDF (5/6 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE

AP4953M
14
I _D = -5A
12
V _DS = -15V
10
8
6
4
2
0
0
5
10
15
20
25
30
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100
Crss
10
1
5
9
13
17
21
25
29
-V _DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T _j =150 ^o C
1.00
T _j =25 ^o C
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2
1
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature