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| AP4953M Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE | |||
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AP4953M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 20V
ID=-5A
VDS=-15V
VGS=-10V
VDS=-15V
ID=-1A
RG=6Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-15V
f=1.0MHz
-30 - - V
- -0.1 - V/â
- - 53 mΩ
- - 90 mΩ
-1 - -3 V
-6-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 20 - nC
- 3.5 - nC
- 2 - nC
- 12 - ns
- 20 - ns
- 45 - ns
- 27 - ns
- 800 - pF
- 425 - pF
- 110 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25â, IS=-1.7A, VGS=0V
Min. Typ. Max. Units
- - -1.67 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 â/W when mounted on Min. copper pad.
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