IRF840 Datasheet, PDF (4/4 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840
12
I _D =8A
10
V _DS =100V
V _DS =250V
8
V _DS =400V
6
4
2
0
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
1
T _c =25 ^o C
Single Pulse
10ms
100m
1s
DC
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
f=1.0MHz
10000
1000
C _iss
C _oss
100
C _rss
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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