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| IRF840 Datasheet, PDF (2/4 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | |||
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IRF840
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=1mA
VGS=10V, ID=4.8A
VDS=VGS, ID=250uA
VDS=10V, ID=4.8A
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±20V
ID=8A
VDS=400V
VGS=10V
VDD=250V
ID=8A
RG=9.1Ω,VGS=10V
RD=31Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
500 -
-
V
-
- 0.85 Ω
2
-
4
V
- 4.2 -
S
-
- 25 uA
-
- 250 uA
-
- ±100 nA
- 45 72 nC
-
7
- nC
- 25 - nC
- 12 - ns
- 31 - ns
- 48 - ns
- 33 - ns
- 1250 2000 pF
- 270 - pF
- 85 - pF
- 1.6 2.4 â¦
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr
Reverse Recovery Charge
Test Conditions
Tj=25â, IS=8A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.5 V
- 515 - ns
- 8.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
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