AP9452GG_08 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Lower gate charge, Capable of 2.5V gate drive

AP9452GG
14
I_D=4A
12
10
V _DS =16V
V _DS =12V
8
V _DS =10V
6
4
2
0
0
2
4
6
8
10
12
14
16
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1
10ms
100ms
0.1
1s
T _A =25 ^o C
DC
Single Pulse
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off)tf
Fig 11. Switching Time Waveform
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.001
0.00001
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja=100℃/W
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4