AP9452GG_08 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Lower gate charge, Capable of 2.5V gate drive

Advanced Power
Electronics Corp.
AP9452GG
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower gate charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
20V
50mΩ
4A
D
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V³
Continuous Drain Current, V_GS @ 4.5V³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Rating
20
+16
4
2.5
12
1.25
0.01
-55 to 150
-55 to 150
Value
100
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200806173