AP9410GM Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

AP9410GM
16
I _D = 18 A
12
V _DS =15V
V _DS =20V
V _DS =24V
8
4
0
0
40
80
120
160
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
10ms
1
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor =0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=125 ℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform