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| AP9410GM Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance | |||
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AP9410GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=18A
VGS=4.5V, ID=12A
VGS=2.5V, ID=6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=10V, ID=12A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ± 12V
ID=18A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 -
-
V
- 0.01 - V/â
-
-
5 mΩ
-
-
6 mΩ
-
-
8 mΩ
-
- 1.2 V
-
47 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 59 95 nC
- 10 - nC
- 23 - nC
- 16 - ns
- 12 - ns
- 96 - ns
- 30 - ns
- 5080 8100 pF
- 660 - pF
- 400 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=18A, VGS=0V
IS=18A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 43 - ns
- 39 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 â/W when mounted on min. copper pad.
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