AP9408GJ Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

AP9408GH/J
16
I _D =10A
12
V _DS =16V
V _DS =20V
V _DS =24V
8
4
0
0
10
20
30
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
10
1
T _C =25 ^o C
Single Pulse
1ms
10ms
100ms
DC
0
0.1
1
10
100
V _DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
120
V _DS =5V
100
T _j =25 ^o C
T _j =175 ^o C
80
60
40
20
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
1000
C _iss
C _oss
C _rss
100
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4